| 摘要 |
<p>PURPOSE: A nonvolatile storage device and a manufacturing method thereof are provided to be commonly used in a mobile device, thereby strongly requesting reduction of an operating current when bit density increases. CONSTITUTION: A nonvolatile storage device(10) includes component memory layers. The component memory layers(54) are laminated on a layer surface perpendicularity. A layered structure unit(53) is provided between the first wire and the second wire. At least one of the first and second wires is provided to a part facing a recording layer. At least one of the first and second wires includes a protrusion protruded toward the recording layer.</p> |
