THE METHODS OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to form insertion patterns with an even number between the first basic pattern and the second basic pattern by a double patterning method. CONSTITUTION: A method of manufacturing a semiconductor device comprises the following steps. The first material film(34) is formed on a semiconductor substrate. The first pattern(35a) of the second material film including a trench(T2) partially etched in a depth direction on an upper surface is formed on the first material film. Hard mask film patterns(37-2,37-3,37-1) corresponding respectively to regions of the first basic pattern, the second basic pattern and the first insertion pattern are formed. The first pattern of the second material film is etched to form the second pattern of the second material film by etching the first pattern of the second material film to expose the first material film by the hard mask film pattern as an etching mask.