METHOD FOR FABRICATION OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor memory device is provided to improve the process of the semiconductor memory device by forming a gate electrode layer in a space in which a sacrificing layer is removed to prevent the increase of a pattern margin and the contamination of a gate electrode layer. CONSTITUTION: A manufacturing method of a semiconductor memory device comprises the following steps of: forming the first gate pattern by sequentially stacking a gate insulating layer, a conductive film, and a sacrificing layer on a semiconductor substrate(100); forming an insulating layer on the semiconductor substrate including the first gate pattern; etching the insulating layer to expose the sacrificing layer; removing the exposed sacrificing layer to expose the conductive film; and forming a gate electrode layer(116) on the conductive film.