发明名称 CMOS image sensor with improved performance incorporating pixels with burst reset operation
摘要 A reset transistor includes a floating diffusion region for detecting a charge, a junction region for draining the charge, a gate for controlling a transfer of the charge from the floating diffusion region to the junction region upon receipt of a reset signal, and a potential well incorporated underneath the gate.
申请公布号 US7622758(B2) 申请公布日期 2009.11.24
申请号 US20070790767 申请日期 2007.04.27
申请人 HYNECEK JAROSLAV 发明人 HYNECEK JAROSLAV
分类号 H01L31/062;H01L27/146;H01L29/76;H01L29/94;H01L31/06;H01L31/113;H01L31/119;H04N5/335;H04N5/355;H04N5/357;H04N5/369;H04N5/374;H04N5/376 主分类号 H01L31/062
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