| 摘要 |
There are provided a method for fabricating a MOSFET. The method includes: substrate, forming a semiconductor substrate, a germanium layer by implanting germanium (Ge) ions into a semiconductor substrate, forming an epitaxial layer doped with high concentration impurities over the germanium layer, forming a gate structure on the epitaxial layer, and forming source/drain regions with lightly doped drain (LDD) regions in the semiconductor substrate. The germanium layer supplies carriers into the epitaxial layer so that short channel effects are reduced.
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