发明名称 |
Methods for forming multilayer structures |
摘要 |
The present invention relates to methods of forming multilayer structures and the structures themselves. In one embodiment, a method of forming a multilayer structure comprises: providing a dielectric composition comprising paraelectric filler and polymer wherein the paraelectric filler has a dielectric constant between 50 and 150; applying the dielectric composition to a carrier film thus forming a multilayer film comprising a dielectric layer and carrier film layer; laminating the multilayer film to a circuitized core wherein the dielectric layer of the multilayer film is facing the circuitized core; and removing the carrier film layer from the dielectric layer prior to processing; applying a metallic layer to the dielectric layer wherein the circuitized core, dielectric layer and metallic layer form a planar capacitor; and processing the planar capacitor to form a multilayer structure.
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申请公布号 |
US7621041(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20060451763 |
申请日期 |
2006.06.13 |
申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
BANERJI SOUNAK;COX G. SIDNEY;DIETZ KARL HARTMANN |
分类号 |
H05K3/30 |
主分类号 |
H05K3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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