发明名称 Methods for forming multilayer structures
摘要 The present invention relates to methods of forming multilayer structures and the structures themselves. In one embodiment, a method of forming a multilayer structure comprises: providing a dielectric composition comprising paraelectric filler and polymer wherein the paraelectric filler has a dielectric constant between 50 and 150; applying the dielectric composition to a carrier film thus forming a multilayer film comprising a dielectric layer and carrier film layer; laminating the multilayer film to a circuitized core wherein the dielectric layer of the multilayer film is facing the circuitized core; and removing the carrier film layer from the dielectric layer prior to processing; applying a metallic layer to the dielectric layer wherein the circuitized core, dielectric layer and metallic layer form a planar capacitor; and processing the planar capacitor to form a multilayer structure.
申请公布号 US7621041(B2) 申请公布日期 2009.11.24
申请号 US20060451763 申请日期 2006.06.13
申请人 E. I. DU PONT DE NEMOURS AND COMPANY 发明人 BANERJI SOUNAK;COX G. SIDNEY;DIETZ KARL HARTMANN
分类号 H05K3/30 主分类号 H05K3/30
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