METHOD OF FORMING A HARD MASK PATTERN IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A hard mask pattern forming method of a semiconductor device is provided to alleviate the roughness of an SiON film surface after forming the SiON film among hard mask films of the semiconductor device and then performing the plasma processing and prevent the reaction with the other film. CONSTITUTION: A hard mask pattern forming method of a semiconductor device comprises the following steps of: forming an etched layer(101) and the first hard mask film(102) on a semiconductor substrate(100); performing the plasma processing to alleviate the surface roughness of the first hard mask film; forming the second hard mask film(103) on the first hard mask film; and forming a hard mask pattern by etching the first and second hard mask films.