发明名称 Parallel bit test circuit and method for semiconductor memory device
摘要 A semiconductor memory device performs a parallel bit test on a plurality of memory blocks by writing test pattern data into the plurality of memory blocks, outputting two bits from each memory block in parallel and comparing the two bits output from each memory block with each other in a first test mode, and outputting two bits from respectively different memory blocks and comparing the two bits output from the respectively different memory blocks with each other in a second test mode.
申请公布号 US7624317(B2) 申请公布日期 2009.11.24
申请号 US20070709689 申请日期 2007.02.23
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 BYUN SANG-MAN;KANG SANG-SEOK
分类号 G11C29/00 主分类号 G11C29/00
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