发明名称 |
Method of forming an electrically conductive line in an integrated circuit |
摘要 |
A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening is formed in the layer of dielectric material. The opening is located over the electrically conductive feature and has a first lateral dimension. A cavity is formed in the electrically conductive feature. The cavity has a second lateral dimension being greater than the first lateral dimension. The cavity and the opening are filled with an electrically conductive material.
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申请公布号 |
US7622391(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20070678324 |
申请日期 |
2007.02.23 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
FROHBERG KAI;WERNER THOMAS;QING SU RUO |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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