发明名称 |
Semiconductor device with T-shaped gate electrode and hollow region adjacent the gate electrode |
摘要 |
In a semiconductor device, a SiN first protective insulating film is formed on a semiconductor layer. A T-shaped gate electrode is formed on the semiconductor layer. A SiN second protective insulating film spreads in an umbrella shape from above the T-shaped gate electrode. A hollow region is formed between the two SiN films. The SiN films are coated with a SiN third protective insulating film with the hollow region remaining.
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申请公布号 |
US7622767(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20070943868 |
申请日期 |
2007.11.21 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NOGAMI YOICHI;HIRAYAMA TOSHIKAZU |
分类号 |
H01L29/788;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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