发明名称 Thin planar semiconductor device
摘要 A thin, planar semiconductor device having electrodes on both surfaces is disclosed. This semiconductor device is provided with an IC chip and a wiring layer having one side that is electrically connected to surface electrodes of the IC chip. On this surface of the wiring layer, conductive posts are provided on wiring of the wiring layer, and an insulating resin covers all portions not occupied by the IC chip and conductive posts. The end surfaces of the conductive posts are exposed from the insulating resin and are used as first planar electrodes. In addition, a resist layer is formed on the opposite surface of the wiring layer. Exposed portions are formed in the resist layer to expose desired wiring portions of the wiring layer. These exposed portions are used as second planar electrodes. Stacking semiconductor devices of this construction enables an improvement in the integration of semiconductor integrated circuits.
申请公布号 US7622801(B2) 申请公布日期 2009.11.24
申请号 US20080050995 申请日期 2008.03.19
申请人 NEC ELECTRONICS CORPORATION 发明人 KURITA YOICHIRO
分类号 H01L23/22;H01L25/065 主分类号 H01L23/22
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