Single crystalline gallium nitride thick film having reduced bending deformation

摘要

The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt angle of C-axis to the <0001> direction per surface distance of 0.0022°/mm exhibits little bending deformation even at a thickness of 1 mm or more, and therefore, is beneficially used as a substrate for a luminescent device.