APPARATUS FOR CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A chemical vapor deposition apparatus is provided to largely speed up flow speed of a reaction gas without largely increasing a flow amount of the reaction gas when a size of a susceptor is reduced, thereby growing a uniform thin film on an object to be deposited. CONSTITUTION: A chemical vapor deposition apparatus includes a chamber, a susceptor, a gas introducing unit, and a ceiling member. The chamber(10) forms a reaction furnace(12) for deposition of an object to be deposited. The susceptor(30) is exposed to the reaction furnace by accommodating the object(34) to be deposited. The gas introducing unit(20) is in a side of the chamber to spray the reaction gas to the reaction furnace.