| 摘要 |
PURPOSE: A method of depositing an oxide film by using a low temperature CVD is provided to prevent the characteristic of a semiconductor device from being degraded due to the use of a furnace. CONSTITUTION: A method of depositing an oxide film by using a low temperature CVD comprises the following steps of: forming the oxide film by using a silicon precursor, in which the hydrocarbon amino substituent is included on a substrate, and the reaction gas; and thermal-processing the formed oxide film in the temperature of 400 degrees centigrade or 300 degrees centigrade.
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