发明名称 |
Floating gate non-volatile memory and method thereof |
摘要 |
A method is provided which includes forming a first gate overlying a major surface of an electronic device substrate and forming a second gate overlying and spaced apart from the first gate. The method further includes forming a charge storage structure horizontally adjacent to, and continuous along, the first gate and the second gate, wherein a major surface of the charge storage structure is substantially vertical to the major surface of the substrate.
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申请公布号 |
US7622349(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20050302937 |
申请日期 |
2005.12.14 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SADD MICHAEL A.;CHINDALORE GOWRISHANKAR L.;HONG CHEONG M. |
分类号 |
H01L21/8239;H01L21/28 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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