发明名称 Semiconductor structure and the forming method thereof
摘要 The present invention provides a semiconductor structure and the forming method thereof. The structure includes a substrate having a plurality of stacks; a conformal layer on the substrate and a portion of sidewalls of the plurality of the stacks; and a plurality of plugs between the plurality of stacks. In addition, the present invention also provides a method of forming the semiconductor structure, comprising steps of providing a substrate; forming a plurality of stacks on the substrate; forming a conformal layer on the stacks and on the substrate; removing a portion of the conformal layer to expose a sidewall and a top surface of the plurality of stacks; and forming a plurality of plugs between the stacks.
申请公布号 US7622381(B2) 申请公布日期 2009.11.24
申请号 US20070829371 申请日期 2007.07.27
申请人 NANYA TECHNOLOGY CORP. 发明人 HO JAR-MING;LIN SHIAN-JYH;HUANG MING-YUAN
分类号 H01L21/4763;H01L21/44 主分类号 H01L21/4763
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