METHOD OF FABRICATING FLASH MEMORY DEVICES HAVING SELF-ALIGNED FLOATING GATE AND RELATED DEVICE

摘要

A flash memory device having a self-aligned floating gate and a fabricating method thereof are provided to freely adjust a thickness of the aligned floating gate by forming the aligned floating gate on an upper region of a fin body. An isolation layer(57') defining a fin body(53) is formed on a semiconductor substrate(51). A sacrificial pattern having an opening self-aligned with an upper region of the fin body is formed on the isolation layer. The opening is filled with a floating gate pattern, and the sacrificial pattern is removed. A gate interlayer dielectric(81) is formed to cover the floating gate pattern. A control gate conductive layer is formed on the entire surface of the substrate. The control gate conductive layer, the gate interlayer dielectric, and the floating gate pattern are sequentially patterned to a form a control gate electrode(87) and a floating gate(77'F).