发明名称 |
Method for improved formation of nickel silicide contacts in semiconductor devices |
摘要 |
A method of forming silicide contacts for semiconductor devices includes subjecting a silicon containing semiconductor wafer to a degas treatment at an initial degas temperature of about 250 to about 400° C., transferring the semiconductor wafer from a degas chamber to a deposition chamber, depositing a nickel containing layer over the wafer following transfer of the wafer from the degas chamber to the deposition chamber, and annealing the semiconductor wafer so as to create silicide regions at portions on the wafer where nickel material is formed over silicon.
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申请公布号 |
US7622386(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20060567517 |
申请日期 |
2006.12.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MADAN ANITA;PURTELL ROBERT J.;WONG KEITH KWONG HON;KWAK JUN-KEUN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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