发明名称 |
Processing apparatus and gas discharge suppressing member |
摘要 |
A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.
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申请公布号 |
US7622017(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20040856797 |
申请日期 |
2004.06.01 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HIMORI SHINJI;ENDOH SHOSUKE;NAGASEKI KAZUYA;KUBOTA TOMOYA;HAYASHI DAISUKE |
分类号 |
C23C16/509;C23C16/00;C23C16/52;C23F1/00;H01L21/00;H01L21/306;H01L21/3065;H01L21/683 |
主分类号 |
C23C16/509 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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