发明名称 Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof
摘要 On a substrate that is transparent to exposure light, a phase-shift multilayer film including a stack of two layers of a metal silicide compound is formed. A stabilized oxide layer is formed on the surface of the metal silicide compound layer close to the top surface. The layer close to the substrate (the lower layer) of the phase-shift multilayer film is made of a relatively-metal-rich metal silicide compound, and the upper layer is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer. Thus, the stabilized oxide layer is highly chemically stable and has a high chemical resistance.
申请公布号 US7622227(B2) 申请公布日期 2009.11.24
申请号 US20060431550 申请日期 2006.05.11
申请人 SHIN-ETSU CHEMICAL CO., LTD 发明人 INAZUKI YUKIO;YOSHIKAWA HIROKI;MARUYAMA TAMOTSU;OKAZAKI SATOSHI
分类号 G03F1/29;G03F1/32;G03F1/68;H01L21/027 主分类号 G03F1/29
代理机构 代理人
主权项
地址