发明名称 |
Fused nanocrystal thin film semiconductor and method |
摘要 |
A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.
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申请公布号 |
US7622371(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20060548230 |
申请日期 |
2006.10.10 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
PAN ALFRED;NG HOU T. |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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地址 |
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