发明名称 Semiconductor device having multiple wiring layers
摘要 A semiconductor device comprises a plurality of semiconductor elements; and a first wire and a second wire provided to connect the semiconductor elements in parallel. The first wire and the second wire include respective wires formed in multiple wiring layers. Each wiring layer includes the first wire and the second wire formed alternately and in parallel. The wires are formed as to intersect each other in adjacent wiring layers. The first wires are connected with each other through a via-connection at an intersection of the first wires and the second wires are connected with each other through a via-connection at an intersection of the second wires.
申请公布号 US7622757(B2) 申请公布日期 2009.11.24
申请号 US20060415115 申请日期 2006.05.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ENDO KOICHI;SUMI YASUTO;ADACHI KATSUYUKI
分类号 H01L27/10;H01L23/48 主分类号 H01L27/10
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