发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
Disconnection of wiring and deterioration of step coverage are prevented to offer a semiconductor device of high reliability. A pad electrode formed on a silicon die is connected with a re-distribution layer on a back surface of the silicon die. The connection is made through a pillar-shaped conductive path filled in a via hole penetrating the silicon die from the back surface of the silicon die to the pad electrode. |
申请公布号 |
US7622810(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20030683464 |
申请日期 |
2003.10.14 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TAKAO YUKIHIRO |
分类号 |
H01L23/48;H01L21/60;H01L23/31;H01L23/40;H01L23/485;H01L23/52;H01L27/146;H01L27/148 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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