发明名称 Semiconductor device and manufacturing method thereof
摘要 Disconnection of wiring and deterioration of step coverage are prevented to offer a semiconductor device of high reliability. A pad electrode formed on a silicon die is connected with a re-distribution layer on a back surface of the silicon die. The connection is made through a pillar-shaped conductive path filled in a via hole penetrating the silicon die from the back surface of the silicon die to the pad electrode.
申请公布号 US7622810(B2) 申请公布日期 2009.11.24
申请号 US20030683464 申请日期 2003.10.14
申请人 SANYO ELECTRIC CO., LTD. 发明人 TAKAO YUKIHIRO
分类号 H01L23/48;H01L21/60;H01L23/31;H01L23/40;H01L23/485;H01L23/52;H01L27/146;H01L27/148 主分类号 H01L23/48
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