Heterostructure fabrication method for e.g. optical filed, involves applying thermal budget to heterostructure for bringing heterostructure to relaxation temperature to cause deformation of relaxation layer and relaxation of thin layer

摘要

The method involves transferring an assembly composed of a thin indium gallium nitride layer (5) and a relaxation layer (6) on a substrate i.e. mechanical support (3), to form a middle heterostructure (8), where the thin and relaxation layers are made of crystalline and monocrystalline materials, respectively. A thermal budget is applied to the heterostructure for bringing the heterostructure to a relaxation temperature to cause the plastic deformation of the relaxation layer and partial relaxation of the thin layer by elastic deformation for obtaining a final heterostructure. The thin layer is transferred on a substrate i.e. middle support (2), by smart cut(RTM: very fine crystalline layer transfer process) technology. The relaxation layer is made of a material selected from a group consisting of silicon, germanium, indium phosphide or gallium arsenide. An independent claim is also included for a heterostructure comprising a relaxation layer.