GALLIUM NITRIDE EPITAXIAL CRYSTAL, METHOD FOR PRODUCTION THEREOF, AND FIELD EFFECT TRANSISTOR

摘要

Disclosed are: a gallium nitride epitaxial crystal; a method for producing the gallium nitride epitaxial crystal; and a field effect transistor. The gallium nitride epitaxial crystal comprises a substrate and the following components (a) to (e): (a) a gate layer; (b) a highly pure first buffer layer having a channel layer which is contacted with the interface with a surface of the gate layer facing toward the substrate; (c) a second buffer layer arranged on a surface of the first buffer layer facing toward the substrate; (d) a non-gallium nitride insulating layer which is arranged on a surface of the second buffer layer facing toward the substrate and which has an opening at a part thereof; and (e) a p-type semiconductor crystal layer arranged on a surface of the insulating layer facing toward the substrate. The gallium nitride epitaxial crystal further comprises a connection layer comprising a gallium nitride crystal at the opening of the non-gallium nitride insulating layer for connecting the first buffer layer to the p-type semiconductor crystal layer electrically.