发明名称 |
READ DISTURB REDUCTION CIRCUIT FOR SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY |
摘要 |
Systems, circuits and methods for reducing read disturbances in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A resistive element can be used during the read operation to control the read current and control read disturbances. An isolation element can be used to isolate the resistive element from the circuit during write operations.
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申请公布号 |
KR20090119920(A) |
申请公布日期 |
2009.11.20 |
申请号 |
KR20097020232 |
申请日期 |
2008.03.06 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
YOON, SEI SEUNG;KANG, SEUNG H.;SANI MEHDI HAMIDI |
分类号 |
G11C11/15;G11C7/06;G11C7/12;G11C7/22 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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