METHOD FOR POLISHING HETEROSTRUCTURES

摘要

A polishing method of a heterostructure (12) comprising at least one relaxed superficial heteroepitaxial layer (121) on a substrate (120) made from a different material from that of said heteroepitaxial layer. The method comprises a first chemical mechanical polishing step of the surface of the heteroepitaxial layer (12) performed with a polishing cloth (14) having a first compressibility ratio and with a polishing solution having a first silica particle concentration. The first chemical mechanical polishing step is followed by a second chemical mechanical polishing step of the surface of the heteroepitaxial layer (121), said second step being performed with a polishing cloth having a second compressibility ratio, higher than said first compressibility ratio, and with a polishing solution having a second silica particle concentration, lower than said first concentration.