| 摘要 |
PROBLEM TO BE SOLVED: To provide a screening method that is carried out in short time and at low cost, and to provide a method of manufacturing a non-volatile semiconductor memory using such a screening method. SOLUTION: The method is provided for manufacturing a non-volatile semiconductor memory which has a plurality of memory elements having a control gate and a floating gate. After a plurality of memory elements are formed, an erase voltage stress is applied to a plurality of the memory elements formed on the wafer of the volatile semiconductor memory of a finished final wiring process, then, the inside of the floating gate becomes electrically neutral by irradiating an electromagnetic wave on all the surface of the wafer. Afterward, a protective film without the penetration to an electromagnetic wave is formed on the upper surface, and whether it is good is determined by a wafer test. COPYRIGHT: (C)2010,JPO&INPIT |
