CONTACT FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device manufacturing method includes a step of implanting, by ion implantation, a p-type or an n-type impurity into a Si layer section to be a p-type or an n-type contact region of a semiconductor device; a step of forming a metal film for a contact on a surface of the contact region without performing heat treatment for activating the implanted ions, after the ion implanting step; and a step of forming a silicide of a metal of the metal film by making the metal react to the Si layer section by applying heat. The step of forming the silicide and the step of activating the implanted ions by heat treatment after the metal film is formed are preferably performed at the same time.