| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to improve production yield by increasing a margin according to an axial direction of a contact hole pattern and forming an asymmetry contact hole. CONSTITUTION: In a method for forming a semiconductor device, a first exposure process is performed by using a first exposure masks in which a first space patterns in a first direction are molded. A second exposure process is performed by using a second exposure mask(200) in which a second space pattern(210) in a second direction with crossed with the first direction. A contact hole is formed through a photolithography process.</p> |
