| 摘要 |
<p>PURPOSE: A flash memory device and a method of manufacturing the same are provided to allow a charge storage metal layer to be arranged on a side of it on which is contacted with a gate electrode. CONSTITUTION: A flash memory device includes a substrate, a gate pattern, a charge storage gate, a charge storage metal, a dielectric layer between gates. A substrate includes an active area defined by an element isolation film, and the gate pattern is expanded to be crossed with the active area. The charge storage gate is arranged at a cross point of the gate pattern and the active area and includes a top surface, a side surface, and a bottom surface. The charge storage metal layer is interposed between the side and gate pattern of the charge storage gate.</p> |
