| 摘要 |
PROBLEM TO BE SOLVED: To enable curtailment in numbers of manufacturing steps and improvement in characteristic of pixel in a solid-state imaging device. SOLUTION: The solid-state imaging device has a first element separating unit 43 having a pixel portion 23, a peripheral circuit 24, and an STI structure formed on the semiconductor substrate 22 of the peripheral circuit 24; and a second element separating unit 45 having the STI structure, formed on the semiconductor substrate 22 of the pixel portion 23, with a shallower embedded portion inside the semiconductor substrate 22 than that inside the semiconductor substrate 22 of the first element separating unit 43, and with the same height of the surface as that of the first element separating unit 43. COPYRIGHT: (C)2010,JPO&INPIT |
