| 摘要 |
A non-volatile semiconductor storage device includes: a plurality of memory cells storing information based on a change in resistance value; and a plurality of first and second wirings connected to the plurality of memory cells and activated in reading data from and writing data to a certain one of the memory cells. Each of the memory cells includes: an irreversible storage element storing information based on a change in resistance value associated with breakdown of an insulation film; and a voltage booster circuit receiving an input of a voltage-boost clock performing clock operation in writing data to a certain one of the memory cells and applying a voltage-boosted signal boosted based on the voltage-boost clock to one end of the irreversible storage element.
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