发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes: a copper (Cu) wire having a first region and a second region in which densities of silicon (Si) and oxygen (O) atoms are higher than in the first region; a compound film that is selectively formed on the Cu wire and contains Cu and Si; and a dielectric film formed on a side surface side of the Cu wire.
申请公布号 US2009283913(A1) 申请公布日期 2009.11.19
申请号 US20090435485 申请日期 2009.05.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HAYASHI YUMI;MATSUNAGA NORIAKI;USUI TAKAMASA
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
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