发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes: a copper (Cu) wire having a first region and a second region in which densities of silicon (Si) and oxygen (O) atoms are higher than in the first region; a compound film that is selectively formed on the Cu wire and contains Cu and Si; and a dielectric film formed on a side surface side of the Cu wire.
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申请公布号 |
US2009283913(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
US20090435485 |
申请日期 |
2009.05.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HAYASHI YUMI;MATSUNAGA NORIAKI;USUI TAKAMASA |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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