| 摘要 |
A plasma ion implanter is provided to prevent the generation of corrosion at a conventional wafer loading unit by preventing a wafer loading electrode from being exposed to plasma in a vacuum chamber using an insulator capable of shielding the wafer loading electrode. A plasma ion implanter includes a vacuum chamber(10) for keeping a vacuum state, a plasma generating unit, a wafer loading unit, a high voltage pulse supply unit, and a gas supply unit. The plasma generating unit is attached to an outer portion of a dielectric plate of the vacuum chamber to generate plasma. The wafer loading unit(40) is shielded by using an insulator in the vacuum chamber. The wafer loading unit is used for loading a wafer. The high voltage pulse supply unit(50) is used for supplying an AC type high voltage pulse to the wafer loading unit. The gas supply unit(60) is used for supplying a plasma gas into the vacuum chamber.
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