发明名称 |
HIGH SPEED ORTHOGONAL GATE EDMOS DEVICE AND FABRICATION |
摘要 |
An orthogonal gate extended drain MOSFET (EDMOS) structure provides a low gate-to-drain capacitance (CGD) and exhibits increased reliability. It has a gate electrode that is folded into the shallow trench isolation (STI) oxide region. Horizontal and vertical gate electrode segments provide gate control. It accommodates both high voltage devices and standard CMOS components on the same substrate. Reduced surface field (RESURF) technology is employed to optimize tradeoffs between high breakdown voltage and specific on-resistance. Device fabrication steps are compatible with standard CMOS flow and process modules can be added or removed from baseline CMOS technology.
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申请公布号 |
US2009283825(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
US20090466396 |
申请日期 |
2009.05.15 |
申请人 |
ASAHI KASEI MIRCRODEVICES CORPORATION |
发明人 |
WANG HAO;NG WAI TUNG;XU HUAPING |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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