发明名称 |
METHODS FOR FORMING ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS |
摘要 |
Protuberances (5), having vertical (h) and lateral (p) dimensions less than the wavelength range of lights detectable by a photodiode (8), are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sub lithographic features of a first polymeric block component (112) within a matrix of a second polymeric block component (111). The pattern of the polymeric block component is transferred into a first optical layer (4) to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection. |
申请公布号 |
CA2719681(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
CA20092719681 |
申请日期 |
2009.05.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADKISSON, JAMES W.;ELLIS-MONAGHAN, JOHN J.;GAMBINO, JEFFREY P.;MUSANTE, CHARLES F. |
分类号 |
H01L31/112;H01L31/0236 |
主分类号 |
H01L31/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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