| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress an increase in area overhead caused by dividing word lines. <P>SOLUTION: A semiconductor storage device includes: a memory cell array including a plurality of word lines and a plurality of bit lines crossing each other and a plurality of memory cells connected to intersections between the word lines and bit lines and independently provided with ports for reading and ports for writing; and a word line driver for driving the word lines. Elements constituting the memory cells and elements constituting the word line driver are standardized in size. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
