| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which prevents the generation of air bubbles between upper metal layers for wiring when laminating a dry film resist to form a columnar electrode on the upper surface of a connection pad in the upper metal layer for wiring by electrolytic plating. <P>SOLUTION: A ring-shape resist height position regulating part 27 is formed in the circumferential part of the upper surface of a substrate metal layer 8 which is formed on the whole surface of a semiconductor wafer 21, and the upper metal layers 9 for wiring are formed on the upper surface of the substrate metal layer. The semiconductor wafer is arranged in the recess 32 of a wafer stage 31 so as to make the upper metal layer and the upper surface of the resist height position regulating part flush with an upper surface in the circumference of the recession in the wafer stage. Then, the dry film resist 33 is laminated on the wafer stage, the upper metal layer, and the upper surface of the resist height position regulating part. In this state, a space 35 is formed between the dry film resist and the substrate metal layer so as to prevent the generation of the air bubbles between the upper metal layers for wiring. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
