| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a large-capacity and highly reliable flash memory by reducing proximity effects due to interferences between adjacent cells visualized along with increase in density of integration and reduction in size of a flash memory. <P>SOLUTION: A NAND type flash memory system includes a NAND type flash memory chip 1 and a memory controller 2 for controlling writing to each memory cell of the NAND type flash memory chip 1. In this case, an interference amount is predicted by calculation based on data patterns of surrounding adjacent memory cells and the degree of parasitic capacity coupling between adjacent memory cells, the data patterns are converted so as to exhibit original characteristics after damages, and a writing amount is adjusted for each memory cell, thereby reducing proximity effects between the adjacent memory cells. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
