发明名称 THIN-FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a thin-film transistor and a method of manufacturing the same, whereby: an organic semiconductor layer can be formed simply and accurately without using a bank; and the level difference between the organic semiconductor layer and any one of its source and drain electrodes can be reduced. SOLUTION: In the thin-film transistor and the method of manufacturing the same, liquid-repulsing thin-film layers are formed on the top surfaces of its source and drain electrodes and a semiconductor layer is brought into contact with the side surfaces of its source and drain electrodes so as to form an organic semiconductor layer simply and accurately without using a bank and reduce the level difference between the organic semiconductor layer and any one of its source and drain electrodes. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009272523(A) 申请公布日期 2009.11.19
申请号 JP20080123146 申请日期 2008.05.09
申请人 KONICA MINOLTA HOLDINGS INC 发明人 YAMADA JUN
分类号 H01L29/786;H01L21/336;H01L51/05;H01L51/40 主分类号 H01L29/786
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