发明名称 |
THIN-FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor and a method of manufacturing the same, whereby: an organic semiconductor layer can be formed simply and accurately without using a bank; and the level difference between the organic semiconductor layer and any one of its source and drain electrodes can be reduced. SOLUTION: In the thin-film transistor and the method of manufacturing the same, liquid-repulsing thin-film layers are formed on the top surfaces of its source and drain electrodes and a semiconductor layer is brought into contact with the side surfaces of its source and drain electrodes so as to form an organic semiconductor layer simply and accurately without using a bank and reduce the level difference between the organic semiconductor layer and any one of its source and drain electrodes. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2009272523(A) |
申请公布日期 |
2009.11.19 |
申请号 |
JP20080123146 |
申请日期 |
2008.05.09 |
申请人 |
KONICA MINOLTA HOLDINGS INC |
发明人 |
YAMADA JUN |
分类号 |
H01L29/786;H01L21/336;H01L51/05;H01L51/40 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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