发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR CAPACITPR DEVICE |
摘要 |
A method for fabricating a semiconductor capacitor includes a substrate having thereon a carbon electrode. A transitional barrier layer is then deposited on the carbon electrode layer. Thereafter, a metal oxide layer is deposited on the transitional barrier layer, which reacts with the underlying transitional barrier layer to form a metal oxy-nitride layer acting as a capacitor dielectric layer of the capacitor device. A top electrode layer is then formed on the metal oxy-nitride layer.
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申请公布号 |
US2009283856(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
US20080167239 |
申请日期 |
2008.07.02 |
申请人 |
HUANG TSAI-YU;NIEH SHIN-YU;HSIEH CHUN-I |
发明人 |
HUANG TSAI-YU;NIEH SHIN-YU;HSIEH CHUN-I |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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