发明名称 SEMICONDUCTOR DEVICE AND METHOD
摘要 A chip carrier includes first, second and third layers with the second layer situated between the first and third layers. The first and third layers are formed of a first material and the second layer is formed of a second material. The second layer has a plurality of holes extending therethrough and the first material fills the holes.
申请公布号 US2009283879(A1) 申请公布日期 2009.11.19
申请号 US20080119665 申请日期 2008.05.13
申请人 INFINEON TECHNOLOGIES AG 发明人 HEINRICH ALEXANDER;SCHIESS KLAUS;MAHLER JOACHIM
分类号 H01L23/373;H01L21/60 主分类号 H01L23/373
代理机构 代理人
主权项
地址