DETECTION OF ARCING EVENTS IN WAFER PLASMA PROCESSING THROUGH MONITORING OF TRACE GAS CONCENTRATIONS

摘要

A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is generated from the process gas and the substrate is processed with the plasma. Intensities of real-time spectrometry signals of selected gas species produced in the reaction chamber during plasma processing are monitored. The selected gas species are generated by a substrate arcing event. The arcing event is detected when the intensities are above a threshold value.