发明名称 POSITIVE PEAK DETECTOR
摘要 <p>The invention relates to a positive peak detector (1') that has been specially designed to operate at high frequencies with low power consumption, formed by a cell Gm (2'), a current mirror (3') formed by two CMOS transistors (M'6 and M'7) and a capacitor assembly (4'), in which a capacitor (C) stores the peak voltage (V'p) and is discharged progressively by means of a current source (l'4). The invention comprises the use of a high-performance cell Gm (2') formed by five CMOS transistors, four (M'1-M'4) of which are disposed symmetrically in pairs excited by a pair of current sources (l'1, I'2), while the fifth CMOS transistor (M'5) is excited by another current source (I'3).</p>
申请公布号 WO2009138539(A2) 申请公布日期 2009.11.19
申请号 WO2009ES00256 申请日期 2009.05.12
申请人 UNIVERSIDAD DE ZARAGOZA;CELMA PUEYO, SANTIAGO;CALVO LOPEZ, BELEN;ALEGRE PEREZ, JUAN PABLO 发明人 CELMA PUEYO, SANTIAGO;CALVO LOPEZ, BELEN;ALEGRE PEREZ, JUAN PABLO
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