PURPOSE: A patterning method is provided to use a material in which the melting is difficult as an inversion layer and to form micro space patterns and hole patterns with broad bridge margin. CONSTITUTION: A patterning method using positive negative inversion comprises the steps of: forming a resist layer(30) by at least a positive type resist composition on a substrate(10); obtaining a positive type pattern(30a) by exposing and developing the resist film; crosslinking the obtained positive type pattern; forming an inversion layer(40); and inverting a negative type pattern by dissolving and removing the inversion layer with an alkaline wet etching solution.
