| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to facilitate current diffusion at the center of a light emitting device. CONSTITUTION: A semiconductor light emitting device is composed of a semiconductor layer, a first electrode, a second electrode, and an opening. The plural semiconductor layers include a first semiconductor layer, a second semiconductor layers, and an active layer. A semiconductor layer has a first conductivity, and a second semiconductor layers have a second conductivity different from the first conductivity. The active layer(400) is positioned between the semiconductor layer and the second semiconductor layer. The active layer radiates light through recombination of an electronic and an electron hole. The active layer is removed, and the first electrode is contacted with the first semiconductor layer electrically, and the second electrode is electrically contacted with the second semiconductor layers.
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