FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF

摘要

A flash memory device and a program method thereof are provided to increase program speed as performing a program operation with narrow threshold voltage distribution. According to a program method of a flash memory device(200) for programming plural memory cells(M) from a first state to a second state, the plural memory cells is verified with a verify voltage with a level increasing according to the increase of the number of program loops. The plural memory cells are programmed with a program voltage with an incremental step decreasing according to the increase of the number of program loops. The verify step and the program step constitute a program loop, and the program loop ends when the level of the verify voltage reaches the voltage range of the second state.