| 摘要 |
PROBLEM TO BE SOLVED: To provide a micro device having high driving force by actualizing shallow joining and resistance reduction of an extension diffusion layer accompanying microfabrication. SOLUTION: A semiconductor device has, on a semiconductor substrate 100, a gate electrode 102 with a gate insulating film 101 interposed therebetween, P-type extension high-density diffusion layers 106 formed in a semiconductor area 100 on both sides of a gate electrode 102 by diffusing boron ions respectively, and P-type source-drain diffusion layers 113 which are larger in joining depth than the P-type extension high-density diffusion layers 106 outside the P-type extension high-density diffusion layers 106 of the semiconductor substrate 100. The P-type extension high-density diffusion layers 105 contain carbon on at least one side of both sides of the gate electrode 102. COPYRIGHT: (C)2010,JPO&INPIT
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