发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
摘要 <p>A plasma processing method and a plasma processing apparatus are provided to reduce a manufacturing cost by shortening a manufacturing process time. A plasma processing receptacle(101) include an antenna electrode(102) and a lower electrode(109). A gas supply unit supplies a processing gas to the plasma processing receptacle. An exhaust pump(116) exhausts the processing gas from the plasma processing receptacle through an exhaust valve(115). RF power is applied through a matching unit(105) to the antenna electrode in order to form magnetic field by using a magnetic coil(107) and to generate plasma within the plasma processing receptacle. A sample(108) loaded on the lower electrode is processed by using the plasma. An end of seasoning is determined when a parameter including pressure within the plasma processing receptacle in a plasma processing state approaches a steady value.</p>
申请公布号 KR100780021(B1) 申请公布日期 2007.11.27
申请号 KR20060075692 申请日期 2006.08.10
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 IKEGAMI EIJI;IKUHARA SHOJI;SHIMADA TAKESHI;KUWABARA KENICHI;ARASE TAKAO;MATSUMOTO TSUYOSHI
分类号 H01L21/3065 主分类号 H01L21/3065
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